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| PD - 90552C REPETITIVE A ALANCHE AND dv/dt RATED V HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60 ID -4.0A IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-39 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25C ID @ VGS = -10V, TC = 100C I DM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -4.0 -2.6 -16 20 0.16 20 115 -- -- -5.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 01/22/01 IRFF9120 Electrical Characteristics Parameter BVDSS BVDSS/T J RDS(on) VGS(th) gfs IDSS @ Tj = 25C (Unless Otherwise Specified) Min -100 -- -- -- -2.0 1.25 -- -- -- -- 4.3 1.3 1.0 -- -- -- -- -- Typ Max Units -- -0.10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 0.60 0.69 -4.0 -- -25 -250 -100 100 16.3 4.7 9.0 60 100 50 70 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -10V, ID = -2.6A VGS =-10V, ID =-4.0A VDS = VGS, ID = -250A VDS > -15V, IDS = -2.6A VDS= -80V, VGS=0V VDS = -80V VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-10V, ID = -4.0A VDS= -50V VDD = -50V, ID = -4.0A, RG =7.5 Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 380 170 45 -- -- pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- -4.0 -16 -4.8 200 3.1 Test Conditions A V nS C Tj = 25C, IS =-4.0A, VGS = 0V Tj = 25C, IF = -4.0A, di/dt -100A/s VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC R thJA Junction-to-Case Junction-to-Ambient Min Typ Max Units -- -- -- -- 6.25 175 C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFF9120 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFF9120 13 a& b 13 a& b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFF9120 V DS VGS RG RD D.U.T. + -10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - V DD 5 IRFF9120 VDS L RG D .U .T IA S VD D A D R IV E R -20V -10V tp 0.0 1 15V Fig 12a. Unclamped Inductive Test Circuit IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG -12V 12V .2F .3F -10V QGS VG QGD VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRFF9120 Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, Peak IL = -4.0A, ISD -4.0A, di/dt -110A/s, VDD -100V, TJ 150C Suggested RG = 7.5 Pulse width 300 s; Duty Cycle 2% Case Outline and Dimensions --TO-205AF LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 1/01 www.irf.com 7 |
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